Download Advanced Nanoscale ULSI Interconnects: Fundamentals and by Y. Shacham-Diamand (auth.), Yosi Shacham-Diamand, Tetsuya PDF

By Y. Shacham-Diamand (auth.), Yosi Shacham-Diamand, Tetsuya Osaka, Madhav Datta, Takayuki Ohba (eds.)

ISBN-10: 0387958673

ISBN-13: 9780387958675

ISBN-10: 0387958681

ISBN-13: 9780387958682

Advanced Nanoscale ULSI Interconnects: primary and Applications brings a entire description of copper established interconnect expertise for extremely huge Scale Integration (ULSI) know-how to built-in Circuit (ICs) program. This e-book reports the fundamental applied sciences used this day for the copper metallization of ULSI functions: deposition and planarization. It describes the fabrics used, their houses, and how they're all built-in, in particular in regard to the copper integration approaches and electrochemical strategies within the nanoscale regime. The booklet additionally provides quite a few novel nanoscale applied sciences that may hyperlink smooth nanoscale electronics to destiny nanoscale established platforms. This varied, multidisciplinary quantity will attract technique engineers within the microelectronics undefined; universities with courses in ULSI layout, microelectronics, MEMS and nanoelectronics; and execs within the electrochemical operating with fabrics, plating and gear proprietors.

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Additional info for Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

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This connectivity model is illustrated in Fig. 1. In physical implementation, transistors are laid out on the surface of a semiconductor wafer, and the nets are formed by patterning multiple layers of metal and connecting vias. The logical block boundaries do not appear in the silicon implementation, but high-level blocks typically occupy clearly distinguishable rectangular areas on the die surface in the so-called floorplan (Fig. 2). Fig. 1 Illustration of a system connectivity model. The structure is expanded to view several hierarchical levels of nested cells.

Wordeman, M. ; Kern, D. 1 mm-gate-length level. IEEE Electron Device Lett. EDL-9, 464 (1988) 4. Laux, S. E. and Fischetti, M. : Monte Carlo simulation of submicron Si n-MOSFETs at 77 and 300 K. IEEE Electron Device Lett. 9, 467 (1988) 5. Meindl, J. D. : Interconnect opportunities for gigascale integration. IBM J. Res. & Dev. 46, 245 (2002) 6. Moore, G. : Cramming more components onto integrated circuits. Electronics 38(4) (1965) 7. : The life and death of Moore’s law, published on-line in First Monday, 7 (2002) 8.

The gate delay (or propagation delay) is divided into two terms: the intrinsic gate delay and the (external) gate load delay. The intrinsic gate delay depends on the physical characteristics of the MOSFET transistors. The load delay includes the slowing effect of the load on the gate propagation delay. Therefore, the intrinsic gate delay equals the propagation delay under zero load condition. It can be defined as the time needed for the saturated transistor current IDSAT at drain voltage VDS to charge the gate capacitance CG : X X X 1 0 X 1 Fig.

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